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IRF6668PBF - DirectFET Power MOSFET

Description

The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 100 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature ID 80 TOP 4.3A 7.6A BOTTOM 23A 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www. irf. com 5 IRF6668PbF Current Regulator Same Type as D. U. T. Id Vds 50KΩ 12V .2µF .3µF Vgs D. U. T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgod.

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www.DataSheet4U.com PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  VDSS Qg tot VGS Qgd 7.8nC RDS(on) Qoss 12nC 80V max ±20V max 12mΩ@ 10V Qgs2 1.6nC Qrr 40nC Vgs(th) 4.0V 22nC MZ Applicable DirectFET Outline and Substrate Outline (see p.
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