0.1 2 4 6 8 10 12 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 6. Typical Transfer Characteristic.

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.

The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package .

IRF6668

IRF6668TRPBF

IRF6662

IRF6662PbF

IRF6662PBF

IRF6662TRPbF

IRF6662TRPBF

IRF6665

IRF6665PbF

IRF6665TRPbF

IRF6601

IRF6603

IRF6604