Description
The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
100
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
ID 80
TOP
4.3A 7.6A BOTTOM 23A
60
40
20
0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
www. irf. com
5
IRF6668PbF
Current Regulator Same Type as D. U. T. Id Vds
50KΩ 12V .2µF .3µF
Vgs
D. U. T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgod.
IRF6668PBF_InternationalRectifier.pdf
