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IRF6668TRPBF - DirectFET Power MOSFET

Download the IRF6668TRPBF datasheet PDF. This datasheet also covers the IRF6668PBF variant, as both devices belong to the same directfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Key Features

  • ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 100 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature ID 80 TOP 4.3A 7.6A BOTTOM 23A 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www. irf. com 5 IRF6668PbF Current Regulator Same Type as D. U. T. Id Vds 50KΩ 12V .2µF .3µF Vgs D. U. T. VGS 3mA + V - DS Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgod.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6668PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRF6668TRPBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF6668TRPBF. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l l l l l l l l l l RoHs Compliant  Lead-Fr...

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less otherwise specified) l l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  VDSS Qg tot VGS Qgd 7.8nC RDS(on) Qoss 12nC 80V max ±20V max 12mΩ@ 10V Qgs2 1.6nC Qrr 40nC Vgs(th) 4.0V 22nC MZ Applicable DirectFET Outline and Substrate Outline (see p.

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