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IRF6710S2 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97124D IRF6710S2TRPbF IRF6710S2TR1PbF l RoHS Compliant Containing No Lead and Halogen Free  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  VDSS VGS RDS(on) RDS(on) l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters 25V max ±20V max 4.5mΩ@ 10V 9.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Control FET Application l Compatible with existing Surface Mount Techniques  8.8nC 3.0nC 1.3nC 8.0nC 4.4nC 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

IRF6710S2 Distributor