IRF6711SPBF - Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF6711SPBF
Manufacturer	International Rectifier
File Size	325.56 KB
Description	Power MOSFET
Datasheet	IRF6711SPBF Datasheet
Additional preview pages of the IRF6711SPBF datasheet.

Product details

Description

The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

ward Voltage 90 80 70 ID, Drain Current (A) Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 2.5 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 300 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 0.91A 1.16A.

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Published: Apr 1, 2014 |