l Output Characteristics 1000 VDS = 15V ≤60µs PULSE WIDTH Fig 5. Typical Output Characteristics 2.0 ID = 19A Typical RDS(on) (Normalized) ID, Drain-to-Source Current (A.

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is c.

IRF6711STRPBF

IRF6710S2

IRF6710S2TR1PbF

IRF6710S2TRPbF

IRF6712SPBF

IRF6712STRPBF

IRF6713SPBF

IRF6713STRPBF

IRF6714MPbF

IRF6714MTRPbF

IRF6715MPbF

IRF6715MTRPbF

IRF6716MPBF