Datasheet Details
| Part number | IRF7104PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 241.52 KB |
| Description | HEXFET Power MOSFET |
| Download | IRF7104PBF Download (PDF) |
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| Part number | IRF7104PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 241.52 KB |
| Description | HEXFET Power MOSFET |
| Download | IRF7104PBF Download (PDF) |
|
|
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Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
www.DataSheet4U.com The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.
PD - 95254 IRF7104PbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -20V RDS(on) = 0.250Ω ID = -2.
| Part Number | Description |
|---|---|
| IRF7104 | HEXFET Power MOSFET |
| IRF7101 | Power MOSFET |
| IRF7101PBF | Power MOSFET |
| IRF7102 | Power MOSFET |
| IRF7103 | Power MOSFET |
| IRF7103PBF | Power MOSFET |
| IRF7103Q | Power MOSFET |
| IRF7103QPbF | Power MOSFET |
| IRF7105 | Power MOSFET |
| IRF7105PBF | Power MOSFET |