datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

IRF7104PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRF7104PBF pdf
www.DataSheet4U.com
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
S1
G1
S2
G2
Description
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
PD - 95254
IRF7104PbF
HEXFET® Power MOSFET
1
8 D1
VDSS = -20V
2 7 D1
3 6 D2 RDS(on) = 0.250
4 5 D2
Top View
ID = -2.3A
SO-8
Max.
-2.3
-1.8
-10
2.0
0.016
± 12
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
1
09/21/04


International Rectifier Electronic Components Datasheet

IRF7104PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRF7104PBF pdf
IRF7104PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
-20 ––– ––– V
––– -0.015 ––– V/°C
––– 0.19 0.25
––– 0.30 0.40
-1.0 ––– -3.0 V
––– 2.5 ––– S
––– ––– -2.0 µA
––– ––– -25
––– ––– -100 nA
––– ––– 100
––– 9.3 25
––– 1.6 ––– nC
––– 3.0 –––
––– 12 40
––– 16 40
––– 42 90
ns
––– 30 50
––– 4.0 –––
––– 6.0 –––
nH
––– 290 –––
––– 210 –––
––– 67 –––
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -1.0A ƒ
VGS = -4.5V, ID = -0.50A ƒ
VDS = VGS, ID = -250µA
VDS = -15V, ID = -2.3A ƒ
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 55 °C
VGS = -12V
VGS = 12V
ID = -2.3A
VDS = -10V
VGS = -10V ƒ
VDD = -10V
ID = -1.0A
RG = 6.0
RD = 10ƒ
Between lead,6mm(0.25in.)
from package and center G
of die contact
VGS = 0V
VDS = -15V
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– -2.0
A
showing the
integral reverse
––– ––– -9.2
p-n junction diode.
G
D
S
––– ––– -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V ƒ
––– 69 100 ns TJ = 25°C, IF = -1.25A
––– 90 140 nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ Pulse width 300µs; duty cycle 2%.
‚ ISD -2.3A, di/dt 100A/µs, VDD V(BR)DSS,
TJ 150°C
2
„ Surface mounted on FR-4 board, t 10sec.
www.irf.com


Part Number IRF7104PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 9 Pages
PDF Download
IRF7104PBF pdf
IRF7104PBF Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 IRF7104PBF HEXFET Power MOSFET International Rectifier
International Rectifier
IRF7104PBF pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy