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International Rectifier Electronic Components Datasheet

IRF7105QPBF Datasheet

Power MOSFET

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END OF LIFE
PD - 96102B
IRF7105QPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
S1
G1
S2
G2
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
HEXFET® Power MOSFET
N-CHANNEL MOSFET
18
27
36
45
P-CHANNEL MOSFET
Top View
D1 N-Ch P-Ch
D1
VDSS
D2
D2 RDS(on)
25V -25V
0.10Ω 0.25Ω
ID 3.5A -2.3A
SO-8
Base part number Orderable part number
Package
Type
IRF7105QPbF
IRF7105QTRPbF
IRF7105QPbF
SO-8
SO-8
Standard Pack
Form
Quantity
Tape and Reel 4000
Tube
95
EOL Notice
EOL 527
EOL 529
Replacement Part Number
Please search the EOL part number on IR’s
website for guidance
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient „
www.irf.com
Max.
N-Channel
P-Channel
3.5 -2.3
2.8 -1.8
14 -10
2.0
0.016
± 20
3.0 -3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Min.
–––
Typ.
–––
Max.
62.5
Units
°C/W
1
05/20/14


International Rectifier Electronic Components Datasheet

IRF7105QPBF Datasheet

Power MOSFET

No Preview Available !

IRF7105QPbF
END OF LIFE
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total GateCharge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 25 — —
P-Ch -25 — —
V
N-Ch
P-Ch
— 0.030 —
— -0.015 —
V/°C
N-Ch
—
—
0.083 0.10
0.14 0.16
P-Ch
—
—
0.16 0.25
0.30 0.40
Ω
N-Ch 1.0 — 3.0
P-Ch -1.0 — -3.0
V
N-Ch — 4.3 —
P-Ch — 3.1 —
S
N-Ch — — 2.0
P-Ch —
N-Ch —
—
—
-2.0
25
µA
P-Ch — — -25
N-P –– — ±100
N-Ch — 9.4 27
P-Ch — 10 25
N-Ch —
P-Ch —
1.7
1.9
—
—
nC
N-Ch — 3.1 —
P-Ch — 2.8 —
N-Ch — 7.0 20
P-Ch — 12 40
N-Ch — 9.0 20
P-Ch —
N-Ch —
13
45
40
90
ns
P-Ch — 45 90
N-Ch — 25 50
P-Ch — 37 50
N-P —
N-P —
4.0
6.0
—
—
nH
N-Ch — 330 —
P-Ch — 290 —
N-Ch — 250 —
P-Ch — 210 —
pF
N-Ch — 61 —
P-Ch — 67 —
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 1.0A ƒ
VGS = 4.5V, ID = 0.50A ƒ
VGS = -10V, ID = -1.0A ƒ
VGS = -4.5V, ID = -0.50A ƒ
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 3.5A ƒ
VDS = -15V, ID = -3.5A ƒ
VDS = 20V, VGS = 0V
VDS = -20V, VGS = 0V,
VDS = 20V, VGS = 0V, TJ = 55°C
VDS = -20V, VGS = 0V, TJ = 55°C
VGS = ± 20V
N-Channel
ID = 2.3A, VDS = 12.5V, VGS = 10V
ƒ
P-Channel
ID = -2.3A, VDS = -12.5V, VGS = -10V
N-Channel
VDD = 25V, ID = 1.0A, RG = 6.0Ω,
RD = 25Ω
ƒ
P-Channel
VDD = -25V, ID = -1.0A, RG = 6.0Ω,
RD = 25Ω
Between lead , 6mm (0.25in.)from
package and center of die contact
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
Min. Typ. Max. Units
Conditions
N-Ch — — 2.0
P-Ch — — -2.0 A
N-Ch — — 14
P-Ch — — -9.2
N-Ch — — 1.2 V
P-Ch — — -1.2
TJ = 25°C, IS = 1.3A, VGS = 0V ƒ
TJ = 25°C, IS = -1.3A, VGS = 0V ƒ
N-Ch — 36 54 ns N-Channel
P-Ch — 69 100
TJ = 25°C, IF = 1.3A, di/dt = 100A/µs
N-Ch —
P-Ch —
41
90
75
180
nC
P-Channel
ƒ
TJ = 25°C, IF = -1.3A, di/dt = 100A/µs
N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
ƒ Pulse width 300µs; duty cycle 2%.
‚ N-Channel ISD 3.5A, di/dt 90A/µs, VDD V(BR)DSS, TJ 150°C
P-Channel ISD -2.3A, di/dt 90A/µs, VDD V(BR)DSS, TJ 150°C
2
„ Surface mounted on FR-4 board, t 10sec.
www.irf.com


Part Number IRF7105QPBF
Description Power MOSFET
Maker International Rectifier
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