IRF7107 Datasheet - International Rectifier

HEXFET Power MOSFET

IRF7107 Features

* PD M t 1 t 2 N otes: 1 . D uty fac tor D = t 1 / t 2 0.1 0.00001 2. P ea k TJ = P D M x Z th J A + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Refer to the Appendix Sec

IRF7107 General Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the d.

IRF7107 Datasheet (179.95 KB)

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IRF7107

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International Rectifier

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179.95 KB

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Hexfet power mosfet.
PD - 9.1099B PRELIMINARY IRF7107 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel .

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IRF7107 HEXFET Power MOSFET International Rectifier

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IRF7107 Features

IRF7107 General Description

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