IRF7107 Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

IRF7107 hexfet power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRF7107
Manufacturer	International Rectifier (now Infineon)
File Size	179.95 KB
Description	HEXFET Power MOSFET
Download	IRF7107 Download (PDF)

General Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Overview

PD - 9.1099B PRELIMINARY IRF7107 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast.

Key Features

PD M t 1 t 2 N otes: 1 . D uty fac tor D = t 1 / t 2 0.1 0.00001 2. P ea k TJ = P D M x Z th J A + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Refer to the Appendix Section for the following: Appendix A: Appendix B: Appendix C: Appendix D: Figure 24, Peak Diode Recovery dv/dt Test Circuit.
See page 329. Package Outline Mechanica.

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