IRF7107 - HEXFET Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF7107
Manufacturer	International Rectifier
File Size	179.95 KB
Description	HEXFET Power MOSFET
Datasheet	IRF7107 Datasheet
Additional preview pages of the IRF7107 datasheet.

Product details

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Features

PD M t 1 t 2 N otes: 1 . D uty fac tor D = t 1 / t 2 0.1 0.00001 2. P ea k TJ = P D M x Z th J A + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Refer to the Appendix Section for the following: Appendix A: Appendix B: Appendix C: Appendix D: Figure 24, Peak Diode Recovery dv/dt Test Circuit.
See page 329. Package Outline Mechanica.

📁 Similar Datasheet

IRF710 - N-Channel Power MOSFET (Intersil Corporation)
IRF710 - N-Channel MOSFET (INCHANGE)
IRF710 - N-Channel MOSFET (ART CHIP)
IRF710 - Power MOSFET (Vishay)
IRF710A - N-Channel Mosfet Transistor (Inchange Semiconductor)
IRF710A - Advanced Power MOSFET (Fairchild Semiconductor)
IRF710B - 400V N-Channel MOSFET (Fairchild Semiconductor)
IRF710S - Power MOSFET (Vishay)

Other Datasheets by International Rectifier

IRF7101 - Power MOSFET
IRF7101PBF - Power MOSFET
IRF7102 - Power MOSFET
IRF7103 - Power MOSFET
IRF7103PBF - Power MOSFET
IRF7103Q - Power MOSFET

Published: Jun 4, 2007 |