hexfet power mosfet.
YWW XXXX F7101
IRF7241
SO-8 Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N.
S
1
8 7
A D D D D
S
S G
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C .
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well .
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