Datasheet Details
| Part number | IRF7379PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 245.61 KB |
| Description | Power MOSFET |
| Download | IRF7379PBF Download (PDF) |
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| Part number | IRF7379PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 245.61 KB |
| Description | Power MOSFET |
| Download | IRF7379PBF Download (PDF) |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
PD - 95300 IRF7379PbF HEXFET® Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1.
| Part Number | Description |
|---|---|
| IRF7379 | Power MOSFET |
| IRF7379QPbF | Power MOSFET |
| IRF737LC | HEXFET Power MOSFET |
| IRF737LCPBF | HEXFET Power MOSFET |
| IRF7301 | Power MOSFET |
| IRF7301PBF | HEXFET Power MOSFET |
| IRF7303 | Power MOSFET |
| IRF7303PbF | Power MOSFET |
| IRF7303QPBF | Power MOSFET |
| IRF7304 | Generation V Technology |