Datasheet Details
| Part number | IRF7379QPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 231.11 KB |
| Description | Power MOSFET |
| Datasheet | IRF7379QPbF-InternationalRectifier.pdf |
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Overview: l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l.
| Part number | IRF7379QPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 231.11 KB |
| Description | Power MOSFET |
| Datasheet | IRF7379QPbF-InternationalRectifier.pdf |
|
|
|
These HEXFET® Power MOSFET's in a Dual SO8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional
| Part Number | Description |
|---|---|
| IRF7379 | Power MOSFET |
| IRF7379PBF | Power MOSFET |
| IRF737LC | HEXFET Power MOSFET |
| IRF737LCPBF | HEXFET Power MOSFET |
| IRF7301 | Power MOSFET |
| IRF7301PBF | HEXFET Power MOSFET |
| IRF7303 | Power MOSFET |
| IRF7303PbF | Power MOSFET |
| IRF7303QPBF | Power MOSFET |
| IRF7304 | Generation V Technology |