IRF7379 - Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

• A - -V DS , D ra in -to -S ou rce V oltage (V ) Q G , Total G ate C harge (nC ) Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage Fig 19. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (.