IRF7379 Datasheet | International Rectifier

- 91625 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance plimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V P -C H AN N E L MO S FET RDS(on) 0.045Ω 0.090Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety...