Datasheet Details
| Part number | IRF7379 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 215.39 KB |
| Description | Power MOSFET |
| Datasheet | IRF7379_InternationalRectifier.pdf |
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Overview: PD - 91625 IRF7379 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance plimentary Half Bridge Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 4 5 P -C H AN N E L MO S FET RDS(on) 0.045Ω 0.
| Part number | IRF7379 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 215.39 KB |
| Description | Power MOSFET |
| Datasheet | IRF7379_InternationalRectifier.pdf |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
| Part Number | Description |
|---|---|
| IRF7379PBF | Power MOSFET |
| IRF7379QPbF | Power MOSFET |
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| IRF737LCPBF | HEXFET Power MOSFET |
| IRF7301 | Power MOSFET |
| IRF7301PBF | HEXFET Power MOSFET |
| IRF7303 | Power MOSFET |
| IRF7303PbF | Power MOSFET |
| IRF7303QPBF | Power MOSFET |
| IRF7304 | Generation V Technology |