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IRF7379PBF - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • ONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 10 1 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www. irf. com IRF7379PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574.

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Other Datasheets by International Rectifier (now Infineon)

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IRF7379 Power MOSFET
IRF7379QPbF Power MOSFET
IRF737LC HEXFET Power MOSFET
IRF737LCPBF HEXFET Power MOSFET
IRF7301 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95300 IRF7379PbF HEXFET® Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V 6 5 P-CHANNEL MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.