Datasheet Details
| Part number | IRF7702 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 138.75 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF7702 Datasheet
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| Part number | IRF7702 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 138.75 KB |
| Description | Power MOSFET |
| Datasheet |
IRF7702 Datasheet
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HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner 2 3 4 1= 2= 3= 4= D S S G G 6 S 8= 7= 6= 5= D S S D 5 with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
PD - 93849C PROVISIONAL IRF7702 HEXFET® Power MOSFET RDS(on) max 0.014@VGS = -4.5V 0.019@VGS = -2.5V 0.027@VGS = -1.8V l l l l l l Ultra Low On-Resistance -1.8V Rated P-Channel MOSFET Very Small SOIC Package Low Profile ( < 1.1mm) Available in Tape & Reel VDSS -12V ID -8.0A -7.0A -5.
| Part Number | Description |
|---|---|
| IRF7702PbF | Power MOSFET |
| IRF7700 | Power MOSFET |
| IRF7700GPBF | Power MOSFET |
| IRF7701 | Power MOSFET |
| IRF7701GPBF | Power MOSFET |
| IRF7703 | Power MOSFET |
| IRF7703GPBF | Power MOSFET |
| IRF7704 | Power MOSFET |
| IRF7704GPBF | Power MOSFET |
| IRF7704PbF | Power MOSFET |