IRF7701GPBF Datasheet - International Rectifier

IRF7701GPBF Power MOSFET

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner 9 ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT .

IRF7701GPBF Features

* to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sa

IRF7701GPBF_InternationalRectifier.pdf