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IRF7702

Power MOSFET

IRF7702 General Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner 2 3 4 1= 2= 3= 4= D S S G.

IRF7702 Datasheet (138.75 KB)

Preview of IRF7702 PDF

Datasheet Details

Part number:

IRF7702

Manufacturer:

International Rectifier

File Size:

138.75 KB

Description:

Power mosfet.
PD - 93849C PROVISIONAL IRF7702 HEXFET® Power MOSFET RDS(on) max 0.014@VGS = -4.5V 0.019@VGS = -2.5V 0.027@VGS = -1.8V l l l l l l Ultra Low On-Res.

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IRF7702 Power MOSFET International Rectifier

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