900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

IRF7756 Datasheet

Power MOSFET

No Preview Available !

l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
PD -94159A
VDSS
-12V
IRF7756
HEXFET® Power MOSFET
RDS(on) max
0.040@VGS = -4.5V
0.058@VGS = -2.5V
0.087@VGS = -1.8V
ID
±4.3A
±3.4A
±2.2A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
1
2
3
4
1 = D1
2 = S1
3 = S1
4 = G1
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
8
7
6
5
8 = D2
7 = S2
6 = S2
5 = G2
TSSOP-8
Max.
-12
-4.3
-3.5
-17
1.0
0.64
8.0
±8.0
-55 to +150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
125
Units
°C/W
1
3/17/04


International Rectifier Electronic Components Datasheet

IRF7756 Datasheet

Power MOSFET

No Preview Available !

IRF7756
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-12 ––– –––
––– -0.006 –––
––– ––– 0.040
––– ––– 0.058
––– ––– 0.087
-0.4 ––– -0.9
13 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 12 18
––– 1.8 2.7
––– 2.9 4.4
––– 12 –––
––– 18 –––
––– 160 –––
––– 170 –––
––– 1400 –––
––– 310 –––
––– 240 –––
V
V/°C
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -4.3A ‚
VGS = -2.5V, ID = -3.4A ‚
VGS = -1.8V, ID = -2.2A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -4.3A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8.0V
VGS = 8.0V
ID = -4.3A
VDS = -6.0V
VGS = -4.5V
VDD = -6.0V,
ID = -1.0A
RG = 6.0
VGS = -4.5V ‚
VGS = 0V
VDS = -10V
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -1.0
––– -17
––– -1.2
35 53
20 30
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.0A, VGS = 0V ‚
TJ = 25°C, IF = -1.0A
di/dt = -100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 10sec.
2 www.irf.com


Part Number IRF7756
Description Power MOSFET
Maker International Rectifier
PDF Download

IRF7756 Datasheet PDF






Similar Datasheet

1 IRF7750 Power MOSFET
International Rectifier
2 IRF7750GPBF Power MOSFET
International Rectifier
3 IRF7751 Power MOSFET
International Rectifier
4 IRF7751GPBF Power MOSFET
International Rectifier
5 IRF7751PbF Power MOSFET
International Rectifier
6 IRF7752 Power MOSFET
International Rectifier
7 IRF7752GPBF Power MOSFET
International Rectifier
8 IRF7754 Power MOSFET
International Rectifier
9 IRF7754GPBF Power MOSFET
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy