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l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel
PD -94159A
VDSS
-12V
IRF7756
HEXFET® Power MOSFET
RDS(on) max
0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V
ID
±4.3A ±3.4A ±2.2A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
IRF7756 Datasheet
