Datasheet4U Logo Datasheet4U.com

IRF7756GPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD- 96153A IRF7756GPbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max 0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V ID -4.3A -3.4A -2.

General Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner ' !

" # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB & % $ 'Ã2Ã9!

Key Features

  • ons subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.