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International Rectifier Electronic Components Datasheet

IRF7835PBF Datasheet

HEXFET Power MOSFET

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IRF7835PBF pdf
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PD - 97068
IRF7835PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l Very Low Qrr
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Lead-Free
VDSS
30V
S
S
S
G
HEXFET® Power MOSFET
RDS(on) max
Qg
4.5m:@VGS = 10V 22nC
AA
1 8D
2 7D
3 6D
4 5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Max.
30
± 20
19
15
150
2.5
1.6
0.02
-55 to + 155
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes  through … are on page 9
www.irf.com
1
1/5/06


International Rectifier Electronic Components Datasheet

IRF7835PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRF7835PBF pdf
IRF7835PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
–––
–––
–––
1.35
–––
0.023
3.6
4.5
1.8
-6.0
–––
4.5
5.7
2.35
–––
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 19A
eVGS = 4.5V, ID = 15A
V VDS = VGS, ID = 50µA
mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
81 ––– ––– S VDS = 15V, ID = 15A
Qg Total Gate Charge
––– 22 33
Qgs1 Pre-Vth Gate-to-Source Charge ––– 5.5 ––– VDS = 15V
Qgs2
Post-Vth Gate-to-Source Charge
––– 2.1 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge
––– 7.2 –––
ID = 15A
Qgodr
Qsw
Qoss
RG
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
––– 7.2 –––
See Fig. 16
––– 9.3 –––
––– 14 ––– nC VDS = 16V, VGS = 0V
––– 1.0 1.7
td(on)
Turn-On Delay Time
––– 9.6 –––
VDD = 15V, VGS = 4.5V
tr Rise Time
––– 13 –––
ID = 15A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 14 ––– ns Clamped Inductive Load
––– 4.6 –––
Ciss Input Capacitance
––– 2960 –––
VGS = 0V
Coss Output Capacitance
––– 610 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 270 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
240
15
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A showing the
––– ––– 150
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 15A, VGS = 0V
––– 16 24 ns TJ = 25°C, IF = 15A, VDD = 15V
e––– 21 32 nC di/dt = 320A/µs
ton Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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Part Number IRF7835PBF
Description HEXFET Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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