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IRF8308MPBF - POWER MOSFET

Description

The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF8308MPbF ISD, Reverse Drain Current (A) ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000.0 100.0 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 150 ID, Drain-to-Source Current (A) 1000 100.

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Full PDF Text Transcription

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IRF8308MPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters 28nC 8.2nC 3.5nC 34nC 20nC 1.8V l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested Applicable DirectFET Outline and Substrate Outline (see p.
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