IRF8308MTRPbF Description
IRF8308MPbF DirectFET Power MOSFET l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Low Profile (<.IRF8308MTRPbF Features
* © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF8308MPbF ISD, Reverse Drain Current (A) ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000.0 100.0 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-DrainIRF8308MTRPbF Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t
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