IRF9410 Datasheet - International Rectifier

Power MOSFET

IRF9410 Features

* uro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 9/97

IRF9410 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF9410 Datasheet (114.86 KB)

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IRF9410

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International Rectifier

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114.86 KB

Description:

Power mosfet.
PD - 9.1562A PRELIMINARY l l l l l l IRF9410 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Moun.

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IRF9410 Power MOSFET International Rectifier

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IRF9410 Features

IRF9410 General Description

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