Datasheet Details
| Part number | IRF9952PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 227.18 KB |
| Description | HEXFET Power MOSFET |
| Download | IRF9952PBF Download (PDF) |
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| Part number | IRF9952PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 227.18 KB |
| Description | HEXFET Power MOSFET |
| Download | IRF9952PBF Download (PDF) |
|
|
|
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
PD - 95135 IRF9952PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 D1 D1 D2 D2 N-Ch P-Ch VDSS 30V -30V 3 6 4 5 P-CHANNEL MOSFET Top View RDS(on) 0.10Ω 0.
| Part Number | Description |
|---|---|
| IRF9952 | Power MOSFET |
| IRF9952QPBF | Power MOSFET |
| IRF9953 | Power MOSFET |
| IRF9953PBF | Power MOSFET |
| IRF9956 | Power MOSFET |
| IRF9956PBF | HEXFET Power MOSFET |
| IRF9910 | Power MOSFET |
| IRF9910PBF | Power MOSFET |
| IRF9910TRPBF-1 | Power MOSFET |
| IRF9130 | P-Channel Power MOSFET |