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IRF9953PBF - Power MOSFET

General Description

l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -30V RDS(on) = 0.25Ω 6 5 Top View Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremel

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Full PDF Text Transcription for IRF9953PBF (Reference)

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www.DataSheet4U.com PD - 95477 IRF9953PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching L...

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-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -30V RDS(on) = 0.25Ω 6 5 Top View Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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