Datasheet Details
| Part number | IRF9956PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 172.93 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
 IRF9956PBF Datasheet
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| Part number | IRF9956PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 172.93 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
IRF9956PBF Datasheet
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SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25°C TA = 70°C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range 30 ± 20 3.5 2.8 16 1.7 2.0 1.3 44 2.0 0.20 5.0 -55 to + 150 A W mJ A mJ V/ ns °C Thermal Resistance Ratings Maximum Junction-to-Ambient Parameter Symbol RθJA Limit 62.5 Units °C/W 09/21/04 IRF9956PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdow
PD - 95259 IRF9956PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.10Ω 3 6 4 5 Top View Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
| Part Number | Description |
|---|---|
| IRF9956 | Power MOSFET |
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| IRF9952PBF | HEXFET Power MOSFET |
| IRF9952QPBF | Power MOSFET |
| IRF9953 | Power MOSFET |
| IRF9953PBF | Power MOSFET |
| IRF9910 | Power MOSFET |
| IRF9910PBF | Power MOSFET |
| IRF9910TRPBF-1 | Power MOSFET |
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