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International Rectifier Electronic Components Datasheet

IRFH5300PBF Datasheet

HEXFET Power MOSFET

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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30
1.4
50
1.3
h100
V
m:
nC
:
A
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverter MOSFET
www.DatPaSDhee-t94U7.4co1m0
IRFH5300PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features and Benefits
Features
Benefits
Low RDSon (1.4mΩ)
Low Thermal Resistance to PCB (0.5°C/W)
100% Rg tested
Low Profile (0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5300TRPBF
IRFH5300TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 8
www.irf.com
Max.
30
± 20
40
32
h100
h100
400
3.6
250
0.029
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
9/17/09


International Rectifier Electronic Components Datasheet

IRFH5300PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5300PbF
www.DataSheet4U.com
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
1.1
1.7
1.8
-6.2
–––
–––
–––
–––
–––
120
50
12
6.5
16
16
23
30
1.3
26
30
31
13
7200
1360
590
Max. Units
Conditions
–––
–––
1.4
2.1
2.35
–––
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eemΩ
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
V
mV/°C
VDS
=
VGS,
ID
=
150μA
5.0
150
100
-100
–––
–––
75
μA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 50A
nC VGS = 10V, VDS = 15V, ID = 50A
––– VDS = 15V
–––
–––
nC
VGS = 4.5V
ID = 50A
––– See Fig.17 & 18
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 50A
RG=1.8Ω
––– See Fig.15
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
420
50
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Thermal Resistance
Min. Typ. Max. Units
Conditions
h––– ––– 100
MOSFET symbol
––– ––– 400
A
showing the
integral reverse
G
p-n junction diode.
––– ––– 1.0
eV TJ = 25°C, IS = 50A, VGS = 0V
––– 34 51 ns TJ = 25°C, IF = 50A, VDD = 15V
––– 68 100 nC di/dt = 200A/μs
Time is dominated by parasitic Inductance
D
S
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
2
f Parameter
Junction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
0.5
15
35
21
Units
°C/W
www.irf.com


Part Number IRFH5300PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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