IRFH5302DPBF Datasheet | International Rectifier

VDS RDS(on) max (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 2.5 mΩ 0.65 V 19 ns h 100 Applications - Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low RDSon (<2.5mΩ) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<1.2°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques RoHS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification HEXFET® Power MOSFET PQFN 5X6 mm Benefits Lower Conduction Losses Lower Switching Losses Increased Power Density Increased Reliability...