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International Rectifier Electronic Components Datasheet

IRFH5302DPBF Datasheet

HEXFET Power MOSFET

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IRFH5302DPbF
VDS
RDS(on) max
(@VGS = 10V)
VSD max
(@IS = 5.0A)
trr (typical)
ID
(@Tc(Bottom) = 25°C)
30 V
2.5 m
0.65
19
h100
V
ns
A
Applications
Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low RDSon (<2.5m)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5302DTRPBF
IRFH5302DTR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Qua nti ty
Tape and Reel
4000
Tape and Reel
400
Note
EOL Notice #259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through † are on page 8
Max.
30
± 20
29
23
100
100
400
3.6
104
0.83
-55 to + 150
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
March 6, 2014


International Rectifier Electronic Components Datasheet

IRFH5302DPBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH5302DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆ΒVDSS/TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.25
2.0
3.1
1.80
-10
–––
–––
–––
–––
–––
55
26
6.2
4.0
7.9
7.9
11.9
19
1.9
16
30
20
12
3635
680
260
Max.
–––
–––
2.5
3.7
2.35
–––
500
5.0
100
-100
–––
–––
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V/°C
m
V
VGS = 0V, ID = 500µA
Reference to 25°C, ID = 1.0mA
eVGS = 10V, ID = 50A
eVGS = 4.5V, ID = 50A
VDS = VGS, ID = 100µA
mV/°C
µA VDS = 24V, VGS = 0V
mA VDS = 24V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 15V, ID = 50A
nC VGS = 10V, VDS = 15V, ID = 50A
VDS = 15V
nC
VGS = 4.5V
ID = 50A
nC VDS = 16V, VGS = 0V
VDD = 15V, VGS = 4.5V
ns
ID = 50A
RG=1.8
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Typ.
–––
–––
Max.
130
50
Units
mJ
A
Min. Typ. Max. Units
Conditions
––– ––– 100
––– ––– 400
––– ––– 0.65
––– ––– 1.0
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 5.0A, VGS = 0V
eV TJ = 25°C, IS = 50A, VGS = 0V
––– 19 29 ns TJ = 25°C, IF = 50A, VDD = 15V
––– 28 42 nC di/dt = 300A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
1.2
15
35
22
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 6, 2014


Part Number IRFH5302DPBF
Description HEXFET Power MOSFET
Maker International Rectifier
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IRFH5302DPBF Datasheet PDF






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International Rectifier





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