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International Rectifier Electronic Components Datasheet

IRFH7004PBF Datasheet

HEXFET Power MOSFET

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StrongIRFET™
IRFH7004PbF
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l RoHS Compliant containing no Lead, no Bromide,
and no Halogen
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.1mΩ
1.4mΩ
c259A
100A
PQFN 5X6 mm
Base Part Number
IRFH7004PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7004TRPBF
6.0
ID = 100A
4.0
TJ = 125°C
2.0
TJ = 25°C
0.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2013 International Rectifier
300
250
Limited By Package
200
150
100
50
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
June 7, 2013


International Rectifier Electronic Components Datasheet

IRFH7004PBF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH7004PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
dContinuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ Operating Junction and
TSTG
Storage Temperature Range
Avalanche Characteristics
EAS (Thermally limited)
eSingle Pulse Avalanche Energy
EAS (tested)
IAR
EAR
lSingle Pulse Avalanche Energy Tested Value
ÃdAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
kJunction-to-Case
kJunction-to-Case
jJunction-to-Ambient
jJunction-to-Ambient
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40 –––
––– 0.033
––– 1.1
––– 1.7
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
2.2 3.0
––– –––
––– –––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– –––
––– –––
RG Internal Gate Resistance
––– 2.4
Max.
–––
–––
1.4
–––
3.9
1.0
150
100
-100
–––
Max.
259™
164™
100
1247
156
1.3
± 20
-55 to + 150
Units
A
W
W/°C
V
°C
191
314
See Fig. 14, 15, 22a, 22b
Typ.
0.5
–––
–––
–––
Max.
0.8
15
34
21
mJ
A
mJ
Units
°C/W
Units
Conditions
V
V/°C
mΩ
mΩ
V
μA
nA
VGS = 0V, ID = 250μA
dReference to 25°C, ID = 1.0mA
gVGS = 10V, ID = 100A
gVGS = 6.0V, ID = 50A
VDS = VGS, ID = 150μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Ω
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width 400μs; duty cycle 2%.
temperature. Package is limited to 100A by production test
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
capability. Note that current limitations arising from heating of the
as Coss while VDS is rising from 0 to 80% VDSS.
device leads may occur with some lead mounting arrangements.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
(Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1 inch square 2 oz copper pad on 1.5 x 1.5 in. board of
temperature.
FR-4 material.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.038mH
RG = 50Ω, IAS = 100A, VGS =10V.
„ ISD 100A, di/dt 1366A/μs, VDD V(BR)DSS, TJ 150°C.
‰ Rθ is measured at TJ approximately 90°C.
Š This value determined from sample failure population,
starting TJ = 25°C, L= 0.038mH, RG = 50Ω, IAS = 100A, VGS =10V.
2 www.irf.com © 2013 International Rectifier
June 7, 2013


Part Number IRFH7004PBF
Description HEXFET Power MOSFET
Maker International Rectifier
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