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International Rectifier Electronic Components Datasheet

IRFH7084PbF Datasheet

HEXFET Power MOSFET

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Application
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
DC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
StrongIRFET™
IRFH7084PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID (Silicon Limited)
ID (Package Limited)
40V
0.95m
1.25m
265A
100A
PQFN 5X6 mm
Base part number
IRFH7084PbF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7084TRPbF
6
ID = 100A
5
4
3
2 TJ = 125°C
1
TJ = 25°C
0
4 8 12 16 20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
300
240 Limited by package
180
120
60
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2013 International Rectifier
September 06 , 2013


International Rectifier Electronic Components Datasheet

IRFH7084PbF Datasheet

HEXFET Power MOSFET

No Preview Available !

IRFH7084PbF
Absolute Maximium Rating
Symbol
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Max.
40
265
170
100
400
1.25
± 20
-55 to + 150
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (tested)
IAR
EAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
185
370
See Fig 14, 15, 23a,
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Typ.
0.5
–––
–––
–––
Max.
0.8
21
35
20
Units
A
A
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.034
0.95
–––
–––
–––
–––
–––
1.4
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
1.25
3.9
1.0
150
100
-100
mVGS = 10V, ID = 100A
V VDS = VGS, ID = 150µA
µA
VDS =40 V, VGS = 0V
VDS =40V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V
–––
Notes:
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by
production test capability.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.037mH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 994A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
This value determined from sample failure population, starting TJ =25°C,
L=0.037mH, RG = 50, IAS =100A, VGS =10V.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
2 www.irf.com © 2013 International Rectifier
September 06, 2013


Part Number IRFH7084PbF
Description HEXFET Power MOSFET
Maker International Rectifier
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International Rectifier





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