* Features Low RDSon (≤ 4.3mΩ ) Schottky intrinsic diode with low forward voltage Benefits Lower Conduction Losses Lower switching losses Low Thermal Resistance to PCB (
IRFHM830DPbF Datasheet (259.45 KB)
IRFHM830DPbF
International Rectifier
259.45 KB
Hexfet power mosfet.
IRFHM830DPbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.3 13 1.1 40 V mΩ nC Ω A 3.3mm x 3.3mm PQFN Qg (typical) RG (typical) ID (@Tc(B.
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