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International Rectifier Electronic Components Datasheet

IRFHM8342TRPBF Datasheet

Power MOSFET

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VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
ID
(@TC (Bottom) = 25°C)
30
16
25
5.0
20
V
m
nC
A
Applications
Control MOSFET for synchronous buck converter
Load Switch
Features
Low Charge (typical 5.2 nC)
Low Thermal Resistance to PCB (<6.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
  Top View
D5
D6
D7
D8
4G
3S
2S
1S
IRFHM8342TRPbF
HEXFET® Power MOSFET
 
PQFN 3.3 x 3.3 mm
Benefits
Low Switching Losses
Enable better Thermal Dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFHM8342PbF
Package Type
 
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8342TRPbF
Absolute Maximum Ratings
VGS
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
TJ
TSTG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
1 www.irf.com © 2013 International Rectifier
 
Max.
± 20
10
28
18
20
112
2.6
20
0.020
-55 to + 150
 
Units
V
A
W
W/°C
°C
August 22, 2013
Free Datasheet http://www.Datasheet4U.com


International Rectifier Electronic Components Datasheet

IRFHM8342TRPBF Datasheet

Power MOSFET

No Preview Available !

  IRFHM8342TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qg
Qgs
Qgd
Qgodr
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
20
13
20
1.8
-5.2
–––
–––
–––
–––
10
5.0
1.8
1.7
1.5
3.3
2.6
8.1
30
7.6
5.6
560
102
48
    
Max. Units
Conditions
–––
–––
16
25
2.35
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 17A
VGS = 4.5V, ID = 14A
V VDS = VGS, ID = 25µA
mV/°C
1.0 µA
100 nA
-100
––– S
––– nC
7.5
––– nC
–––
–––  
VDS = 24V, VGS = 0V
VGS = 20V
VGS = -20V
VDS = 10V, ID = 17A
VGS = 10V, VDS = 15V, ID = 17A
VDS = 15V
VGS = 4.5V
ID = 17A
––– nC VDS = 16V, VGS = 0V
–––  
––– VDD = 15V, VGS = 4.5V
––– ns
–––  
–––  
ID = 17A
RG=1.8
–––
––– pF
–––  
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Typ.
–––
Max.
21
Units
mJ
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
–––
–––
9.4
5.8
  
 
Max. Units
Conditions
20A MOSFET symbol
showing the
D
112 integral reverse
p-n junction diode. G
1.0 V TJ = 25°C, IS = 17A, VGS = 0VS
14 ns TJ = 25°C, IF = 17A, VDD = 15V
8.7 nC di/dt = 330A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
6.2
50
49
34
 
Units
°C/W
2 www.irf.com © 2013 International Rectifier
August 22, 2013
Free Datasheet http://www.Datasheet4U.c


Part Number IRFHM8342TRPBF
Description Power MOSFET
Maker International Rectifier
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IRFHM8342TRPBF Datasheet PDF





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International Rectifier





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