IRFIZ24EPBF Key Features
- Isolated Package
- High Voltage Isolation = 2.5KVRMS
- Sink to Lead Creepage Dist. = 4.8mm
- Fully Avalanche Rated
- Part: IRFIZ24EPBF
- Manufacturer: International Rectifier (official site)
- Size: 224.64 KB
Other IRFIZ24EPBF Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
IRFIZ24A | Power MOSFET |
Inchange Semiconductor |
IRFIZ24G | N-Channel MOSFET |
Vishay |
IRFIZ24G | Power MOSFET |
VBsemi |
IRFIZ24GP | N-Channel 60V MOSFET |
|
Vishay |
IRFIZ24GPbF | Power MOSFET |
IRFIZ24EPBF Description
l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.071Ω G S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide...