Datasheet Details
| Part number | IRFIZ24EPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 224.64 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
 IRFIZ24EPBF Datasheet
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| Part number | IRFIZ24EPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 224.64 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
IRFIZ24EPBF Datasheet
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l HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 0.071Ω G S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist.
= 4.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFIZ24A | Power MOSFET | Samsung |
 |
IRFIZ24G | N-Channel MOSFET | INCHANGE |
 |
IRFIZ24G | Power MOSFET | Vishay |
 |
IRFIZ24GP | N-Channel 60V MOSFET | VBsemi |
|
IRFIZ24GPbF | Power MOSFET | Vishay |
| Part Number | Description |
|---|---|
| IRFIZ24E | Power MOSFET |
| IRFIZ24G | HEXFET Power MOSFET |
| IRFIZ24N | Power MOSFET |
| IRFIZ24NPBF | Power MOSFET |
| IRFIZ24V | Power MOSFET |
| IRFIZ14G | HEXFET Power MOSFET |
| IRFIZ34E | Power MOSFET |
| IRFIZ34EPBF | HEXFET Power MOSFET |
| IRFIZ34G | HEXFET POWER MOSFET |
| IRFIZ34N | Power MOSFET |