IRFIZ46N Datasheet - International Rectifier

Power MOSFET

IRFIZ46N Features

* 2 - D R AIN 3 - SO U R C E 7 .10 (.280) 6 .70 (.263) 16 .0 0 (.630) 15 .8 0 (.622) 1.15 (.04 5) M IN . 1 2 3 N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D

IRFIZ46N General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRFIZ46N Datasheet (104.92 KB)

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IRFIZ46N

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International Rectifier

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104.92 KB

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Power mosfet.
PD - 9.1306A IRFIZ46N HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead C.

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IRFIZ46N Power MOSFET International Rectifier

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IRFIZ46N Features

IRFIZ46N General Description

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