IRFP150V datasheet, mosfet equivalent, International Rectifier

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Features and benefits

.T* + + Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Current Transformer -
* + RG VGS
* d.

Application

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO.

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .

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