IRFP150 Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor IRFP150 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generat

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isc N-Channel MOSFET Transistor IRFP150N，IIRFP150N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·Enhancement mode: ·100% avalanche tes

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IRFP 150/FI-151/FI IRFP 152/FI-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI I

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Power MOSFET IRFP150, SiHFP150 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V

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• Lead-Free PD - 96291 IRFP150MPbF Ω www.irf.com 1 03/01/10 IRFP150MPbF 2 www.irf.com IRFP150MPbF www.irf.com 3 IRFP150MPbF 4 www.irf.com IRF

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• Lead-Free PD - 95002 IRFP150NPbF www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP15

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isc N-Channel MOSFET Transistor IRFP150M，IIRFP150M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤36mΩ ·Enhancement mode: ·100% avalanche tes

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP150FI FEATURES ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Vo

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IRFP150N HEXFET Power MOSFET FEATURES z Avalanche Process Technology z Dynamic dv/dt Rating z 175 Operating Temperature z Fast Switching z Fully Aval

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Semiconductor July 1998 IRFP150, IRFP151, IRFP152, IRFP153 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs Features • 34A and

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www.DataSheet4U.com PD - 95515 IRFP150VPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating T

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP150R FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Vol

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IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE Features • Ultra Low On-Resis

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N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS S IRFP150 January 2002 40A, 100V, 0.055 Ohm, N-Cha

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP150MPBF Features ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min)

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