IRFP2907ZPBF Datasheet | International Rectifier

AUTOMOTIVE MOSFET PD - 95480 IRFP2907ZPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 4.5mΩ‰ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID =...