Datasheet4U.com

IRG4BC10KD Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

📥 Download Datasheet

IRG4BC10KD insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4BC10KD
Manufacturer	International Rectifier (now Infineon)
File Size	235.82 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC10KD Datasheet

Overview

www.DataSheet4U.com PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V.
Combines low conduction losses with high switching speed.
Tighter parameter distribution and higher efficiency than previous generations.
IGBT co-packaged with.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4BC10KDPBF	HEXFET Power MOSFET
IRG4BC10K	Short Circuit Rated UltraFast IGBT
IRG4BC10S	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-L	(IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-LPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-S	(IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SD-SPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10SDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC10UD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC15MD	INSULATED GATE BIPOLAR TRANSISTOR