IRG4BC10S Key Features
- Extremely low voltage drop; 1.1V typical at 2A
- S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives
- Part: IRG4BC10S
- Description: INSULATED GATE BIPOLAR TRANSISTOR
- Manufacturer: International Rectifier
- Size: 182.37 KB
Related International Rectifier Datasheets
| Part Number | Description |
|---|---|
| IRG4BC10SD-L | (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC10SD-LPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC10SD-S | (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC10SD-SPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC10SDPBF | INSULATED GATE BIPOLAR TRANSISTOR |