* UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous Generation
* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recove
IRG4BC10UD Datasheet (210.96 KB)
IRG4BC10UD
International Rectifier
210.96 KB
Insulated gate bipolar transistor.
www.DataSheet4U.com PD 91677B IRG4BC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 600V V.
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