IRG4BC20MD-SPBF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Rugged: 10µsec short circuit capable at VGS=15V

* Low VCE(on) for 4 to 10kHz applications

* IGBT Co-packaged with ultra-soft-recovery antiparallel diode

* Industry standard D2Pak package

* Lead-Free C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(on)

IRG4BC20MD-SPBF

International Rectifier

320.49 KB

Insulated gate bipolar transistor.

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