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International Rectifier Electronic Components Datasheet

IRG4BC20MDPbF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

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PD -94908A
IRG4BC20MDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE
Features
• Rugged: 10µsec short circuit capable at VGS=15V
• Low VCE(on) for 4 to 10kHz applications
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
• Industry standard TO-220AB package
• Lead-Free
G
C
Fast IGBT
VCES = 600V
VCE(on) typ. = 1.85V
Benefits
• Offers highest efficiency and short circuit
capability for intermediate applications
• Provides best efficiency for the mid range frequency
(4 to 10kHz)
• Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
Absolute Maximum Ratings
E
n-channel
@VGE = 15V, IC = 11A
TO-220AB
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
tsc
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
600
18
11
36
36
7.0
10
36
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
V
A
µs
A
V
W
°C
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
10 lbf•in (1.1 N•m)
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
2.1
2.5
------
80
------
Units
°C/W
g (oz)
1
01/19/10


International Rectifier Electronic Components Datasheet

IRG4BC20MDPbF Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

IRG4BC20MDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
VGE(th)
Gate Threshold Voltage
4.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ----
gfe
Forward Transconductance „
3.0
ICES Zero Gate Voltage Collector Current ----
----
VFM Diode Forward Voltage Drop
----
----
IGES
Gate-to-Emitter Leakage Current
----
---- ---- V
0.67 ---- V/°C
1.85 2.1
2.46 ---- V
2.07 ----
---- 6.5
-11 ---- mV/°C
3.6 ---- S
---- 250 µA
---- 2500
1.4 1.7 V
1.3 1.6
---- ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 11A
VGE = 15V
IC = 18A
See Fig. 2, 5
IC = 11A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 11A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
---- 39 59
Gate - Emitter Charge (turn-on)
---- 5.3 8.0
Gate - Collector Charge (turn-on)
---- 20 30
Turn-On Delay Time
---- 21 ----
Rise Time
---- 37 ----
Turn-Off Delay Time
---- 463 690
Fall Time
---- 340 510
Turn-On Switching Loss
---- 0.41 ----
Turn-Off Switching Loss
---- 2.03 ----
Total Switching Loss
---- 2.44 3.7
Turn-On Delay Time
---- 19 ----
Rise Time
---- 41 ----
Turn-Off Delay Time
---- 590 ----
Fall Time
---- 600 ----
Total Switching Loss
---- 3.49 ----
Internal Emitter Inductance
---- 7.5 ----
Input Capacitance
---- 460 ----
Output Capacitance
---- 54 ----
Reverse Transfer Capacitance
---- 14 ----
Diode Reverse Recovery Time
---- 37 55
---- 55 90
Diode Peak Reverse Recovery Current ---- 3.5 5.0
---- 4.5 8.0
Diode Reverse Recovery Charge
---- 65 138
---- 124 360
Diode Peak Rate of Fall of Recovery ---- 240 ----
During tb
---- 210 ----
IC = 11A
nC VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
ns IC = 11A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
diode reverse recovery.
mJ See Fig. 9, 10, 11, 18
ns
mJ
nH
pF
ns
A
nC
A/µs
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 8.0A
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
VR = 200V
TJ = 125°C
16 di/dt 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
2 www.irf.com


Part Number IRG4BC20MDPbF
Description INSULATED GATE BIPOLAR TRANSISTOR
Maker International Rectifier
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International Rectifier





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