IRG4BC20MDPbF Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* Rugged: 10µsec short circuit capable at VGS=15V

* Low VCE(on) for 4 to 10kHz applications

* IGBT Co-packaged with ultra-soft-recovery antiparallel diode

* Industry standard TO-220AB package

* Lead-Free G C Fast IGBT VCES = 600V VCE(on) typ. = 1.85V Benef

IRG4BC20MDPbF

International Rectifier

314.62 KB

Insulated gate bipolar transistor.

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