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IRG4BC30KD-SPBF - HEXFET Power MOSFET

Overview

PD -95674 IRG4BC30KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

  • • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with.