IRG4BC30K-S Overview
PD - 91619B IRG4BC30K-S INSULATED GATE BIPOLAR TRANSISTOR.
IRG4BC30K-S Key Features
- High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
- bines low conduction losses with high switching speed
- Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
- As a Freewheeling Diode we remend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switchi
- Latest generation 4 IGBTs offer highest power density motor controls possible
- This part replaces the IRGBC30K-S and IRGBC30M-S devices