Datasheet4U.com

IRG4BC30K - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

📥 Download Datasheet

IRG4BC30K INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4BC30K

Datasheet Details

Part number	IRG4BC30K
Manufacturer	International Rectifier
File Size	137.96 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC30K Datasheet
Additional preview pages of the IRG4BC30K datasheet.

Product details

Features

High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V.
Combines low conduction losses with high switching speed.
Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits.
As a Freewheeling Diode we recommend our.

📁 Similar Datasheet

IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20K-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20KD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20KD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20MD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)

Other Datasheets by International Rectifier

IRG4BC30K-S - INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30K-SPBF - INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30KD - INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30KD-S - INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30KD-SPBF - HEXFET Power MOSFET
IRG4BC30KPBF - UltraFast IGBT

Published: Jul 27, 2005 |