Datasheet4U Logo Datasheet4U.com

IRG4BC30K - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

  • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V.
  • Combines low conduction losses with high switching speed.
  • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits.
  • As a Freewheeling Diode we recommend our.

📥 Download Datasheet

Datasheet preview – IRG4BC30K

Datasheet Details

Part number IRG4BC30K
Manufacturer International Rectifier
File Size 137.96 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRG4BC30K Datasheet
Additional preview pages of the IRG4BC30K datasheet.

📁 Similar Datasheet

  • IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20K-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20KD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20KD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20MD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20MD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 91596A IRG4BC30K INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.
Published: |