IRG4BC30K-SPBF Datasheet | International Rectifier

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • bines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations • Lead-Free Short Circuit Rated Ultra Fast IGBT VCES = 600V VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A n-channel Benefits • As a Freewheeling Diode we remend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGBC30K-S and IRGBC30M-S devices Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy - Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. D 2 Pak Max. 600 28 16 58 58 10 ±20 260 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Units µs V m J W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state)† Weight Typ. ––– 0.5 ––– 1.44 Max. 1.2 ––– 40 ––– Units °C/W g .irf. 8/27/04 IRG4BC30K-SPb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage - 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 — 2.21 — 2.21 VCE(ON) Collector-to-Emitter Saturation Voltage — 2.88 — 2.36 VGE(th) Gate Threshold Voltage 3.0 — ∆V...