IRG4BC30KD-SPBF
IRG4BC30KD-SPBF is HEXFET Power MOSFET manufactured by International Rectifier.
Features
High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V bines low conduction losses with high switching speed tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free
Short Circuit Rated Ultra Fast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A n-channel
Benefits
Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses This part replaces the IRGBC30KD2-S and IRGBC30MD2-S products For hints see design tip 97003
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
D 2 Pak
Max.
600 28 16 58 58 12 58 10 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm)
Units
µs V W °C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state)
Weight
Typ.
0.5 1.44
Max.
1.2 2.5 40
Units
°C/W g
.irf.
8/11/04
IRG4BC30KD-SPb F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM...