IRG4BC30U Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

* Industry standard TO-220AB package C UltraFast Speed IGBT

IRG4BC30U

International Rectifier

167.87 KB

Insulated gate bipolar transistor.

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