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IRG4BC30FPBF Datasheet Fast Speed IGBT Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD -95651 IRG4BC30FPbF INSULATED GATE BIPOLAR TRANSISTOR.

IRG4BC30FPBF datasheet preview

Datasheet Details

Part number	IRG4BC30FPBF
Manufacturer	International Rectifier (now Infineon)
File Size	244.18 KB
Description	Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC30FPBF_InternationalRectifier.pdf

Key Features

Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG4BC30F	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30FD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30FD-S	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30FD1	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30FDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30K	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30K-S	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30K-SPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30KD	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30KD-S	INSULATED GATE BIPOLAR TRANSISTOR

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