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IRG4BC30FD1 Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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Overview

PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST.

Key Features

  • • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics. • Industry standard TO-220AB package. G E VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for s.

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