UltraFast CoPack IGBT
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with.
Full PDF Text Transcription for IRG4BC30UDPBF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRG4BC30UDPBF. For precise diagrams, and layout, please refer to the original PDF.
PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT UltraFast: Optimized for high operating freq...
View more extracted text
s UltraFast CoPack IGBT UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free C G E n-channel VCES = 600V VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A Benefits Generation -4 IGBT's offer highest efficiencies available IGBTs optimized for specific application conditions HEXFRED diodes optimized for
More Datasheets from International Rectifier (now Infineon)
IRG4BC30UDPBF Datasheet
