IRG4BC30U-S Description
PD - 91803 IRG4BC30U-S INSULATED GATE BIPOLAR TRANSISTOR.
IRG4BC30U-S Key Features
- UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
- Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
- Industry standard D2Pak package
- Generation 4 IGBT's offer highest efficiency available
- IGBT's optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's