Datasheet4U Logo Datasheet4U.com

IRG4BC30U-S - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard D2Pak package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified.

📥 Download Datasheet

Full PDF Text Transcription for IRG4BC30U-S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRG4BC30U-S. For precise diagrams, and layout, please refer to the original PDF.

PD - 91803 IRG4BC30U-S INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant m...

View more extracted text
erating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard D2Pak package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRG4BC30U INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30UD INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30UDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30F INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30FD1 INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30FDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30FPBF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC30K INSULATED GATE BIPOLAR TRANSISTOR